Optically assisted electron injection was employed to quantify neutral electron trap and fixed positive charge concentrations in the gate oxides of electrically biased n‐channel insulated gate field effect transistors exposed to 10 keV x‐rays. This is the first known work to study the effects of an applied gate oxide field during x‐ray irradiation on neutral electron trap generation. Surprisingly, the results show that neutral electron trap generation is dependent upon the gate bias, and the oxide thickness in a similar manner as positive charge buildup during irradiation. This possibly suggests an association between the two defect types. A neutral electron trap generation model is proposed in which the trapped hole center transforms into a dipolar neutral electron trapping site via electron compensation by an electron.
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Walters et al. (1991) studied this question.