880 V/2.7~mΩ² MIS Gate Trench CAVET on Bulk GaN Substrates

In this letter, we report a high-voltage metalinsulator-semiconductor gate trench current aperture vertical electron transistor using metal-organic chemical vapor deposition regrown AlGaN/GaN as the channel and in-situ Si3N4as the gate dielectric. The device had a high breakdown voltage of 880 V and a low Ron,spof 2.7 mQ·cm2. A low hysteresis of ~0.1 V was observed due to the high quality of the in situ Si3N4.