Fully implanted GaAs millimetre-wave planar mixer diodes, suitable for monolithic integration, have been fabricated and tested. Multiple energy implantation, having a maximum energy of 6 MeV, was used to form the 3 μm-thick active layer. The DC and RF characteristics were comparable to state-of-the-art GaAs mixer diodes fabricated on epitaxial layers.
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Thompson et al. (1987) studied this question.
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