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The results of radiation resistance measurements for twelve nonlinear crystals are presented. The crystals include the well-known nonlinear CdGeAs 2 , ZnGeP 2 , AgGaSe 2 , GaSe, AgGaS 2 , and Ag 3 AsS 3 crystals operating in the middle IR range, new mixed AgGaGeS 4 and Cd 0.35 Hg 0.65 Ga 2 S 4 crystals, two-phase (orange and yellow) HgGa 2 S 4 crystal, and the doped GaSe:In crystal. The mixed crystals and the two-phase HgGa 2 S 4 crystal are transparent in the range from 0.4 — 0.5 to 11.5 — 14.5 μm. The measurements were performed using a pulsed single-mode highly stability TEA CO 2 laser with an output pulse duration of ~30 ns. The damage thresholds of new nonlinear AgGaGeS 4 and Cd 0.35 Hg 0.65 Ga 2 S 4 crystals and of the HgGa 2 S 4 crystal (the orange and yellow phases) were found to be 1.5 — 2.2 times higher than for the crystals operating in the middle IR range.
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Andreev et al. (2001) studied this question.
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