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March 28, 2007Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Impact of growth conditions on the spatial non‐uniformities of composition in InGaP epitaxial layers

D. Gregušová Michal Kučera Stanislav Hasenohrl I. Vávra Pavel Štrichovanec Jozef Martaus J. Novák

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Abstract

Composition uniformity of InGaP thick epitaxial layers grown on InGaP/GaP graded buffer structure was studied by stepwise wet chemical etching and low temperature photoluminescence. We compared properties of two epitaxial layers grown by MOCVD technique on different graded buffers. Influence of strain and growth condition on the properties of both epitaxial layer was studied and related to the buffer design. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Gregušová et al. (2007) studied this question.

synapsesocial.com/papers/6aa3d044037baa32b3555bb0 https://doi.org/10.1002/pssc.200674131

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