Silicoin SDR IMPATT diodes have been operated continuously in 200- and 300-GHz bands. A p+-n junction structure was formed by thermal diffusion of boron and ion implantation of phosphorus ions. CW output power of 50 mW was obtained at 202 GHz with 1.3-percent conversion efficiency. At 301-GHz CW output power of 1.2 MW was observed.
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Ishibashi et al. (1976) studied this question.
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