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InAsN/GaAs single quantum wells (SQWs) were fabricated on semi insulating GaAs(001) substrates by RF‐MBE. The redshift of photoluminescence peak with increasing nitrogen content was observed. It is contrary to the recent report for the bulk dilute InAsN alloy where the blueshift of absorption edge has occurred predominantly due to the Burstein–Moss effect. Considering that the Burstein–Moss shift energy of the one‐dimensional quantum well is significantly lower than that of the bulk, this redshift of photoluminescence peak suggests the huge bandgap bowing of InAsN alloy as commonly found in III–V–N type alloys. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Kuroda et al. (2004) studied this question.
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