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Ultra thin (8 nm) silicon nanowires have been fabricated by Atomic Force Microscopy (AFM) lithography on an insulator layer starting from Silicon On Insulator (SOI) substrates. Electrical measurements reveal a high sensitivity of the electron transport in these ultra thin wires to the charge trapping on the Si/SiO2 interface states. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Rochdi et al. (2008) studied this question.
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