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We report on single photon emission from a self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55 μm at the elevated temperatures. The photon auto-correlation histograms of the emission from a charged exciton indicate clear antibunching dips with as-measured g(2)(0) values significantly below 0.5 recorded at temperatures up to 80 K. It proves that the charged exciton complex in a single quantum dash of the mature InP-based material system can act as a true single photon source up to at least liquid nitrogen temperature. This demonstrates the huge potential of InAs on InP nanostructures as the non-classical light emitters for long-distance fiber-based secure communication technologies.
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Dusanowski et al. (2016) studied this question.
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