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June 1, 1999IEEE Electron Device Letters

MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)

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Authors

CCChanghoon ChoiSungshin Women's UniversityJGJung-Suk GooGlobalFoundries (United States)TOTae-Young OhSamsung (South Korea)

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Choi et al. (1999) studied this question.

synapsesocial.com/papers/6aa41fc797c6cf4948c7ef5ehttps://doi.org/10.1109/55.767102
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