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We report GaN/InGaN n-p-n double-heterojunction bipolar transistors with the collector current density (JC) >; 16 kA/cm2and the current gain (β) >; 24 grown on a sapphire substrate. The cutoff frequency (fT) of greater than 5 GHz and the maximum oscillation frequency (fmax) of 1.3 GHz are also measured for a GaN/InGaN heterojunction bipolar transistor at JC= 4.7 kA/cm2.
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Shen et al. (2011) studied this question.
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