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Experimentally obtained results of the change in electrical resistance of the p-type diamond surface conductive layer (PSCL) are simulated using a rate equation. According to a model that simulates the process responsible for the decrease in electrical resistance caused by acid mist containing oxonium ions (H3O+), H3O+ ions react with hydrogen atoms terminating dangling bonds on the diamond surface and cause the creation of holes in diamond films. The rate equation describing these hole creation processes is set up and time-dependent electrical resistance is simulated. The simulated results are in agreement with the experimental results.
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Iida et al. (2005) studied this question.
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