A high speed bipolar transistor with high breakdown voltage BVCEO is described. The structure uses a composite collector of InGaAs and InP. A common emitter gain of 65 is obtained with a base doping of 7 × 1019 cm-3 and a breakdown voltage in excess of 10V. The fr = 64 GHz was reached at a colector-emitter voltage of 2V and a current density of 52KA/cm2. The potential of this structure for very high speed applications is demonstrated by the extracted intrinsic transit time of 0.4 ps.
No takes yet. Share an insight, caveat, or question.
Feygenson et al. (1992) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: