Electron conduction through quasi-one-dimensional indium wires on silicon

Electron conduction through quasi-one-dimensional (1D) indium atomic wires on silicon (the Si(111)-4×1-In reconstruction) is clarified with the help of local structural analysis using scanning tunneling microscopy. The reconstruction has a conductance per square as high as 100 μS, with global conduction despite numerous surface steps. A complete growth of indium wires up to both the surface steps and the lithographically printed electrodes is essential for the macroscopic transport. The system exhibits a metal–insulator transition at 130 K, consistent with a recent ultraviolet photoemission study [H. W. Yeom, S. Takeda, E. Rotenberg, I. Matsuda, K. Horikoshi, J. Schaefer, C. M. Lee, S. D. Kevan, T. Ohta, T. Nagao, and S. Hasegawa, Phys. Rev. Lett. 82, 4898 (1999)].