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The Si 2p x ray photoelectron spectra of SiOx with a different composition of 0 ≤ x ≤ 2 have been studied experimentally and theoretically. The SiOx films were prepared by low-pressure chemical vapor deposition from SiH4 and N2O source at 750 °C. Neither random bonding nor random mixture models can adequately describe the structure of these compounds. The interpretation of the experimental results is discussed according to a large scale potential fluctuation due to the spatial variation of chemical composition in SiOx.
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Novikov et al. (2011) studied this question.
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