Robust 600 V GaN high electron mobility transistor technology on GaN-on-Si with 400 V, 5 µs load-short-circuit withstand capability

A 600 V normally-ON GaN high-electron mobility transistor (HEMT) technology with an intrinsic specific ON resistance R on · A = 500 mΩ·mm 2 and a breakdown voltage of BV dss ∼ 1100 V is described. A novel high-power 30-A-class GaN-Si MOSFET cascode device with a back-side source Si laterally diffused MOSFET (LDMOSFET) and an embedded clamp diode are employed to enable the GaN HEMT to withstand 400 V and a more than 5 µs load short circuit condition, as required in switching inverter applications. Considerations for improvement of the GaN lateral HEMT short-circuit withstand capability are addressed.