Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon

Functioning InP/InGaAs/InP p-i-n photodiodes were integrated onto a Si substrate using hydrogen-induced layer transfer process (ion cut) combined with selective chemical etching. This device transfer process minimizes the hydrogen implantation-induced damage and simultaneously improves the transferred surface flatness for device processing. After transfer, the dark current under the reverse bias increased by ∼1.5 times over that of the as-grown photodiodes at −1.5 V, while the photoinduced current was comparable to that of the as-grown sample. These results were discussed in terms of interactions between minority carriers and the remaining implantation-induced damage.