Copper indium disulphide thin films are deposited by rf sputtering. The structural, compositional, and electrical properties of CuInS2 thin films are investigated. The sulphur content of the films is a function of the induced dc bias voltage. Rutherford backscattering (RBS) reveals the presence of argon impurities in the films which are deposited on water cooled substrates. Copper diffusion into Si substrate is observed at high temperatures (470 °C). Analysis of the mobility data shows that the predominant scattering centers are acoustic phonons and neutral and ionized impurities.
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Samaan et al. (1986) studied this question.
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