Space-charge limited conduction in n+n n+ amorphous hydrogenated silicon films

High field conduction in n+nn+ amorphous hydrogenated silicon (α-Si:H) films has been investigated at different temperatures. The results can be explained by assuming space-charge limited conduction (SCLC) with a uniform density of traps. The value of density of states at the Fermi level, g(EF), obtained from the SCLC measurements ranges between 7−9×1016 cm−3 eV−1. Similar values are obtained by measurements of field effect and frequency and temperature dependence of Schottky barrier capacitance on material grown under identical conditions.