Effect of Trap Density on the Stability of SiInZnO Thin-Film Transistor under Temperature and Bias-Induced Stress

We fabricated high-performance thin-film transistors (TFTs) with a silicon–indium–zinc-oxide (SIZO) channel layer deposited by radio frequency sputtering at room temperature. The SIZO-TFTs passivated with poly(methyl methacrylate) showed a field effect mobility of 8 cm 2 ∕ V ⋅ s and a subthreshold swing of 90 mV/decade even with a process temperature below 150 ° C . Si acted as a stabilizer and carrier suppressor in the In–Zn–O system. In addition, the temperature and bias-induced stability of SIZO-TFTs along with oxygen effects are experimentally studied.