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Investigate the fabrication, structural properties, and efficiency limits of high-performance polycrystalline thin-film ZnO/CdZnS/CuInGaSe2 heterojunction solar cells.

January 1, 1990IEEE Transactions on Electron Devices

Structure and properties of high efficiency ZnO/CdZnS/CuInGaSe/sub 2/ solar cells

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Investigate the fabrication, structural properties, and efficiency limits of high-performance polycrystalline thin-film ZnO/CdZnS/CuInGaSe2 heterojunction solar cells.
Fabricated heterojunction cells by depositing CuInGaSe2 using vacuum physical vapor deposition, CdZnS using chemical solution deposition, and ZnO via reactive sputtering.
Characterized current-voltage behavior, quantum efficiency, layer thicknesses, and optical constants using complete devices and dedicated witness layers.
Achieved total area power conversion efficiencies up to 12.5% under AM1.5 illumination and up to 10.5% under AM0 illumination.
Established baseline optical constants and thickness parameters across all device layers to guide optimization of thin-film photovoltaic stacks.

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Experimental study demonstrates total area efficiencies up to 12.5% in polycrystalline CuInGaSe2 thin-film solar cells, highlighting pathways for optimizing multilayer photovoltaic device performance.

Cite This Study

Devaney et al. (1990) studied this question.

synapsesocial.com/papers/6aa4a1e072bda1c777aa1f1f https://doi.org/10.1109/16.46378

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Structure and properties of high efficiency ZnO/CdZnS/CuInGaSe/sub 2/ solar cells

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Discussion

Implication

Cite This Study

Structure and properties of high efficiency ZnO/CdZnS/CuInGaSe/sub 2/ solar cells

Key Points

Discussion

Implication

Cite This Study