Homogeneous 2D MoTe2 CMOS Inverters and p–n Junctions Formed by Laser‐Irradiation‐Induced p‐Type Doping

Among all typical transition‐metal dichalcogenides (TMDs), the bandgap of α‐MoTe2 is smallest and is close to that of conventional 3D Si. The properties of α‐MoTe2 make it a favorable candidate for future electronic devices. Even though there are a few reports regarding fabrication of complementary metal–oxide‐semiconductor (CMOS) inverters or p–n junction by controlling the charge‐carrier polarity of TMDs, the fabrication process is complicated. Here, a straightforward selective doping technique is demonstrated to fabricate a 2D p–n junction diode and CMOS inverter on a single α‐MoTe2 nanoflake. The n‐doped channel of a single α‐MoTe2 nanoflake is selectively converted to a p‐doped region via laser‐irradiation‐induced MoOx doping. The homogeneous 2D MoTe2 CMOS inverter has a high DC voltage gain of 28, desirable noise margin (NMH = 0.52 VDD, NML = 0.40 VDD), and an AC gain of 4 at 10 kHz. The results show that the doping technique by laser scan can be potentially used for future larger‐scale MoTe2 CMOS circuits.