As a solution to the low on-current of silicon-based tunnel-FETs (TFETs), the source material of the n-channel TFET is replaced with the small-bandgap material germanium, which results in a current boost up to the same level as the current of MOSFETs. However, no solution has been reported to boost the on-current of the all-silicon p-TFET, a necessity for making an inverter and competing with the MOSFET. We have investigated the heterostructure TFET with respect to complementarity based on our semi-analytical model, and we propose the InxGa1-xAs-source silicon-TFET as p-TFET. This design is particularly applicable to nanowire-based transistor architectures. We discuss the complementarity of theI-Vcurves, and we analyze the threshold voltage behavior of the complementary TFETs.
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Verhulst et al. (2008) studied this question.