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A model of hydrogenated amorphous silicon based on the tight-binding coherent-potential approximation method is used to calculate the densities of states and the X-ray spectra of a -Si 1- x Ge x :H alloys. For the first time a quantitative comparison between calculated and measured X-ray spectra is made which reveals good agreement.
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Papaconstantopoulos et al. (1988) studied this question.
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