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We report optical detection of cross relaxation (ODCR) for defects in SiC. Many new defects in as-grown and irradiated SiC have been detected by monitoring the effect of their Zeeman energy-conserving spin flips on the triplet bound-exciton luminescence at Ti and at radiation-produced defects. Defects identified by this technique include the nitrogen donor and aluminum acceptor. ODCR may provide a useful new spectroscopic tool for defect study in semiconductors.
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Lee et al. (1982) studied this question.
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