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, respectively. It is noteworthy that under optimized conditions, a layer of antimony species or suboxides on silica was produced using POSS-Sb without significant Sb loss, highlighting the protective properties of the POSS cage. These results open new perspectives for the controlled and non-destructive Sb-doping (Molecular Layer Doping) of semiconductors dedicated to nano-device applications.
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Alphazan et al. (2017) studied this question.
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