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The time-dependent argon-ion velocity distribution function above and within the plasma sheath of an rf-biased substrate has been measured using laser-induced fluorescence in a commercial plasma processing tool. Discharge parameters were such that the 2.2 MHz rf-bias period was on the order of the ion transit time through the sheath (τ{ion}/τ{rf}=0.3). This work embodies the first time-resolved measurement of ion velocity distribution functions within an rf-biased sheath over a large area (30 cm diameter) silicon wafer substrate.
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Jacobs et al. (2010) studied this question.
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