Atomic Layer Deposition of Low-Resistivity and High-Density Tungsten Nitride Thin Films Using B[sub 2]H[sub 6], WF[sub 6], and NH[sub 3]

Tungsten nitride thin films were grown by atomic layer deposition using alternating exposures of , , and at 300°C. The film thickness linearly increased with the number of the reaction cycles and the determined growth rate was with , , and at pulsing times of 5, 0.25, and 2 s, respectively. The film had a resisitivity of cm with a metallic W-N bond and density of at the thickness of 10 nm. X-ray diffractometry analysis showed that the film had nanocrystalline grains with and δ-WN phase. Step coverage was approximately 100% even on the diameter contact hole with a 16:1 aspect ratio.