Patterning and Visualizing Self-Assembled Monolayers with Low-Energy Electrons

We show that a trimethylsilyl (TMS) self-assembled monolayer on a silicon surface is a self-developing positive resist, which can be patterned with low energy electrons. Contact angle measurements have been used to quantify the efficiency of the exposure as a function of exposure dose and acceleration voltage. Ash formation was negligible, as a 3-aminopropyltriethoxysilane (APTES) self-assembled monolayer could be formed on the patterned area without an intermediate development stage. APTES/TMS patterns have been visualized with scanning electron microscopy at low energy and atomic force microscopy. The functionality of the patterns has been tested by selective deposition of carbon nanotubes.