Single grain boundaries in CuGaSe2 have been grown epitaxially. Hall measurements indicate a barrier of 30-40 meV to majority carrier transport. Nevertheless, local surface potential measurements show the absence of space charge around the grain boundary; i.e., it is neutral. Theoretical calculations [Persson and Zunger, Phys. Rev. Lett. 91, 266401 (2003)] have predicted a neutral barrier for the present Sigma3 grain boundary. Thus, we have experimentally shown the existence of a neutral grain-boundary barrier, however, smaller than theoretically predicted.
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Siebentritt et al. (2006) studied this question.
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