Magnesium (Mg) diffusion into unintentionally doped n-type GaN to form p-type GaN was studied. The Hall measurement data indicated that the diffused and annealed samples consistently show p-type conductivity with average hole concentrations in the range of 1016 cm-3–1017 cm-3 and mobility of <90 cm2·V·s. The diffused GaN showed a strong Mg related emission band with zero phonon peak at 3.27 eV and followed by two longitudinal optical (LO) phonon replica with ∼90 meV separation at 10 K.
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Yang et al. (2000) studied this question.
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