Rutile TiO2(100) thin films have been grown on GaN(0001) surfaces by using the pulsed laser deposition method. Reflection high-energy electron diffraction (RHEED) measurements during the deposition clearly revealed the layer-by-layer growth of TiO2 at a substrate temperature of 400°C under an oxygen pressure of 1×10-5 Torr. X-ray diffraction and atomic force microscopy confirmed that the obtained films have high crystallinity with atomically flat surfaces. Pole figure measurements revealed the epitaxial relationship between TiO2 and GaN, namely that the in-plane TiO2<010> axis aligns parallel to the GaN<1010>.
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Hitosugi et al. (2005) studied this question.
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