Application of a new airbridge-gate structure for high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic field-effect transistors

A new high-performance Ga0.51In0.49P/In0.15Ga0.85As/GaAs pseudomorphic heterostructure field-effect transistor, based on a novel airbridge-gate structure with multiple piers, has been fabricated successfully. Due to the employment of high Schottky barrier GaInP layer and the newly designed double delta-doped sheets (D3S) InGaAs channel, the high gate-to-drain breakdown voltage and broad and linear transconductance are obtained simultaneously. Moreover, the use of airbridge-gate technique not only suppresses the parasitic capacitance, but also exhibits a wide and flat operation regime of the current gain cutoff frequency fT and maximum oscillation frequency fmax.