Electrical properties in vanadyl-phthalocyanine-based metal-insulator-semiconductor devices

We investigated electrical properties of vanadyl phthalocyanine (VOPc) metal-insulator-semiconductor (MIS) devices by the measurement of capacitance and conductance, which were fabricated on ordered para-sexiphenyl (p-6P) layer by weak epitaxy growth method. The VOPc∕p-6P MIS diodes showed a negligible hysteresis effect at a gate voltage of ±20V and small hysteresis effect at a gate voltage of ±40V due to the low interface trap state density of about 1×1010eV−1cm−2. Furthermore, a high transition frequency of about 10kHz was also observed under their accumulation mode. The results indicated that VOPc was a promising material and was suitable to be applied in active matrix liquid crystal displays and organic logic circuits.