Electrical properties of heteroepitaxial p-n junctions composed of correlated electron semiconductors La1−xSrxFeO3 (LSFO) (x=0.4, 0.5, 0.67, and 0.8) and a band semiconductor SrTi0.99Nb0.01O3 were analyzed. The junctions exhibited rectifying current-voltage (I-V) characteristics. The built-in potential (VbiSTO) evaluated from the capacitance-voltage characteristics under reverse bias increased from 0.9eV for x=0.4to1.2eV for x=0.8 junctions, indicating a large downward shift in chemical potential of p-type LSFO due to hole doping. Some of the junctions showed hysteretic I-V characteristics, which have been commonly observed in resistance switching devices, but others did not. LSFO junctions with higher doping (x=0.8) showed higher probability of hysteretic behavior.
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Yamamoto et al. (2007) studied this question.
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