Study on Preparation Conditions of High-Quality ZrN Thin Films Using a Low-Temperature Process

We have investigated the preparation conditions of stoichiometric ZrN films with low resistivity and high crystallinity at relatively low temperatures using an ultrahigh vacuum sputtering system. The film quality was evaluated by means of X-ray diffraction, X-ray photoelectron spectroscopy and Auger electron spectroscopy analyses. The resistivities were measured by a four-probe method. We found that stoichiometric ZrN films with nearly single (100) orientation and resistivity of 17 µΩcm grew on (100) Si under the optimum conditions of N2 flow ratio of 3%, low sputtering power of 15 W and substrate temperature of 500°C. It is therefore concluded that high-quality ZrN films can be obtained at a relatively low substrate temperature, if appropriate sputtering conditions are satisfied using an ultrahigh vacuum sputtering system.