We have made a theoretical investigation of the emission process for the (111) A and B faces of GaAs activated to negative electron affinity taking into account the full Bloch nature of the wave function of the photoexcited electron. We find that, within the abrupt-step model for the potential in the surface region, the emission probability is sensitive to the amount of band bending in the space-charge region. We also find that, all other things being equal (magnitude of the negative electron affinity, amount of band bending, etc.), the emission probability for the B face is considerably higher than that for the A face.
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Burt et al. (1976) studied this question.
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