Hall and drift mobility of polar p-type semiconductors. I. Theory

The contribution to the Hall and drift mobility from the polar scattering by optical modes of p-type semiconductors for low electric fields is investigated including the essential effect of light to heavy hole band mobility and the Hall coefficient factor substantially whereas it hardly influences the heavy hole mobility. Polar scattering by optical modes is considered only. The importance of these effects in any real situation depends on the relative strength of the other scattering processes and this is discussed in several particular cases in a forthcoming paper.