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Current voltage characteristic of the TiOx/metal interface has been studied by the systematic investigation on the top electrode (TE) material dependence of the carrier transport through the TiOx/metal interface. Rather than work function of TE (ϕM), electronegativity (χM) of TE plays a dominant role on current conduction and carrier transport of Pt/TiOx/metal (TE) devices. Pt/TiOx/metal (TE) exhibits rectifying property, if χM of TE is high. On the other hands, a symmetric I-V curves were observed if χM of TE is low. Plots of Schottky barrier at TiOx/metal (TE) interface versus χM of TE provides an index of interface behavior S≈0.55, suggesting partial Fermi-level pinning at TiOx/metal interface.
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Zhong et al. (2010) studied this question.
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