Preparation of intrinsic and N-doped p-type ZnO thin films by metalorganic vapor phase epitaxy

The intrinsic p-type ZnO thin films were prepared by controlling the oxygen partial pressure during growth. The E2 (high) mode at 432.2cm−1 appeared in the Raman spectrum of the film. The photoluminescence spectra taken at 77 K showed the emission band C in the violet region, which originated from zinc vacancy and varied in intensity in accordance with the quantity of the carrier concentration in the films. The N-doped p-type ZnO films were realized by N2 plasma. The Raman spectrum showed the dominant A1 (LO) mode at 580cm−1, that was the result of the host-lattice defects generated by N dopant rather than the N-related local vibration modes.