Growth of Nitrogen-Doped ZnSe and Inhibition of Hydrogen Passivation of Nitrogen Acceptor by Photoassisted Metal-Organic Chemical Vapor Deposition

Growth of nitrogen doped ZnSe was carried out at the growth temperature of 330 to 390° C by photoassisted metal-organic chemical vapor deposition (MOCVD). Nitrogen concentration of more than 1018 cm-3 was obtained at growth temperatures lower than 350° C using ammonia and t-butylamine as nitrogen dopant sources. Furthermore, hydrogen passivation of nitrogen, which is regarded as a possible cause of acceptor compensation in the layer doped using ammonia, was drastically decreased and p-type layer with hole concentration of 8.3×1017 cm-3 was obtained using t-butylamine.