Improving Electrical Characteristics of High-k NiTiO Dielectric with Nitrogen Ion Implantation

A new high-dielectric-constant ( k ) NiTiO dielectric film with a low temperature has been investigated for the first time. The k of the NiTiO film was estimated to be larger than 40. The roughness of the NiTiO dielectric film to nitrogen ion implantation (I/I) was uniform, thus causing a low leakage current (<10 -9 A) and a high breakdown voltage (>25 MV/cm 2 ). These results are superior to those reported in the literature, suggesting a potential use of the NiTiO film as dielectric for future RF/mixed IC applications.