We report the demonstration of near zero voltage coefficient of capacitance (VCC) by exposing the silicon nitride dielectric of the metal-insulator-metal capacitor (MIM) to nitrous oxide (N/sub 2/O) plasma. Oxidization in the N/sub 2/O plasma enhanced the hard breakdown field, whereby an excess of 9 MV/cm was achieved. In addition, low-temperature coefficient of capacitance (TCC) of < 20 ppm/K and high dielectric constant /spl ges/ 6.5 were preserved.
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Ng et al. (2002) studied this question.
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