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Further work on the electrical and electron emissive behaviour of metal-borosilicate glass-metal (MIM) structures is reported. Differences in behaviour of the samples are found for different electrode materials and a systematic variation of properties with insulator thickness is observed. By means of a technique of coating with SiO2 layers, the behaviour of samples containing more than 50% B2O3 can be studied. The variation of properties of M-I-M structures with temperature is discussed and related to the general problems of electronic conduction and emission.
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Hogarth et al. (1974) studied this question.
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