Using a thermal oxide of for masking, excellent planar structures of monocrystalline and polycrystalline were prepared on substrates by molecular beam epitaxy. Micron‐sized monocrystalline of device quality with sufficient electrical isolation by semi‐insulating polycrystalline regions were obtained. Planar‐type MESFET's were successfully fabricated to confirm the application potential of this technique.
No takes yet. Share an insight, caveat, or question.
Hiyamizu et al. (1980) studied this question.