It is shown that the potential barrier φₘₐₓ in a thin-film metal-insulator-metal system increases rapidly with increasing insulator thickness when electrons are immobilized in deep traps in the insulator, and at low voltage biases dφₘₐₓdV is independent of the insulator parameters. This effect may be an explanation of the observations of Lewicki and Mead.
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J.G. Simmons (1969) studied this question.
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