The electrodeposition of zinc telluride (ZnTe) thin films on tin conductive oxide substrates in aqueous solution containing TeO 2 and ZnSO 4 was studied. The electrodeposition mechanism was investigated by cyclic voltammetry. The appropriate potential region where formation of stoichiometric ZnTe semiconductor occurs, was found to be −1.1 V versus saturated calomel electrode, and the pH was maintained at 3.5 ± 0.1. The crystallographic structure of the deposited film is seen to be cubic with a preferential orientation along the (111) phase. Optical absorption studies reveal a bandgap of 2.26 eV and optical constants ( n and k ) are evaluated. Scanning electron microscopy imaging was used to study the surface morphology. The composition of ZnTe films was analysed using an electron microprobe analyser, and the results are discussed.
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Mahalingam et al. (2002) studied this question.
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