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The cavity length dependence of the external differential quantum efficiency and the threshold current density was investigated for ZnCdSe/ZnSe single-quantum-well separate-confinement-heterostructure laser diodes at 77 K. An internal loss of 1.5 cm-1, an internal quantum efficiency of 61% for stimulated emission, a transparency current density of 1.8 kA/(cm2·µm) and a gain factor of 0.36 cm2·µm/A were obtained. The transparency current density is 3-4 times larger than that for bulk GaAs. Improvement in the internal quantum efficiency for spontaneous emission will lead to reduction of the operation current.
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Tsujimura et al. (1993) studied this question.
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