Studies of optically detected magnetic resonance (ODMR) provide detailed information about recombination in hydrogenated amorphous silicon. Two different spin-dependent effects are found which quench the luminescence. One process is identified as nonradiative recombination at dangling bonds. Time-resolved ODMR measurements confirm that the effect occurs at unthermalized spins and provide a new technique for measuring spin-lattice-relaxation times.
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Street et al. (1982) studied this question.
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