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The de I–U characteristics and the switching properties of some semiconducting glassy alloys in the AsSeTe ternary system are studied. The relationship between I at t = 0 and U is the one that corresponds to a space-charge limited current flow with a single carrier and a uniform trap distribution. Ohmic resistance is related to temperature by the known Arrhenius equation, characteristic of intrinsic semiconductors. The functional dependence between delay time and applied voltage, and between threshold voltage and temperature, are explained by a switching model of a basically thermal nature. Finally, the memory phenomenon found is analyzed.
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Mábquez et al. (1987) studied this question.
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